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| Manufacturer: | MACOM | 
| Product Category: | RF MOSFET Transistors | 
| RoHS: | Details | 
| Transistor Polarity: | N-Channel | 
| Technology: | Si | 
| Id - Continuous Drain Current: | 16 A | 
| Vds - Drain-Source Breakdown Voltage: | 125 V | 
| Rds On - Drain-Source Resistance: | - | 
| Operating Frequency: | 150 MHz | 
| Gain: | 17 dB | 
| Output Power: | 150 W | 
| Minimum Operating Temperature: | - 65 C | 
| Maximum Operating Temperature: | + 150 C | 
| Mounting Style: | SMD/SMT | 
| Package / Case: | 221-11-3 | 
| Packaging: | Tray | 
| Brand: | MACOM | 
| Configuration: | Single | 
| Pd - Power Dissipation: | 300 W | 
| Product Type: | RF MOSFET Transistors | 
| Factory Pack Quantity: | 1 | 
| Subcategory: | MOSFETs | 
| Vgs - Gate-Source Voltage: | 40 V | 
| Vgs th - Gate-Source Threshold Voltage: | 3 V | 
| Unit Weight: | 0.740788 oz |